R6047ENZ1 - параметры транзистора MOSFET, его аналоги, datasheet

R6047ENZ1 Datasheet (PDF)

..1. Size:910K rohm
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R6047ENZ1 Nch 600V 47A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.072WID47A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

..2. Size:303K inchange semiconductor
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isc N-Channel MOSFET Transistor R6047ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 72m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:2283K rohm
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R6047MNZ1DatasheetNch 600V 47A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.081 TO-247ID 47APD440W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p

9.2. Size:304K inchange semiconductor
r6047mnz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6047MNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 81m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .