2SJ455 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ455
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Paquete / Cubierta: ZP
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2SJ455 Datasheet (PDF)
2sj455.pdf

2SJ455Ordering number : EN5441SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ455ApplicationsFeatures Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a
2sj451.pdf

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG2. Gate13. Drain2SNote: Marking is ZK. Absol
2sj450.pdf

2SJ450Silicon P-Channel MOS FETADE-208-3811st. EditionApplicationHigh speed power switchingFeatures Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.OutlineUPAK1234D1. GateG2. Drain3. Source4. DrainSThis datasheet has been downloaded from http://www.digchip.com at this page2SJ450Absolute Maximum Rati
Otros transistores... R6046FNZ1 , R6046FNZC8 , R6047ENZ1 , R6076ENZ1 , R8005ANX , R8010ANX , R9521 , R9522 , IRF740 , 2SK0123 , BSC0906NS , IPD09N03LA , IPF09N03LA , IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG .
History: WMN26N65SR | WNMD2167 | STI57N65M5
History: WMN26N65SR | WNMD2167 | STI57N65M5



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