2SJ455 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ455 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Encapsulados: ZP
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2SJ455 datasheet
2sj455.pdf
2SJ455 Ordering number EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a
2sj451.pdf
2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note Marking is ZK . Absol
2sj450.pdf
2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http //www.digchip.com at this page 2SJ450 Absolute Maximum Rati
Otros transistores... R6046FNZ1, R6046FNZC8, R6047ENZ1, R6076ENZ1, R8005ANX, R8010ANX, R9521, R9522, IRF740, 2SK0123, BSC0906NS, IPD09N03LA, IPF09N03LA, IPS09N03LA, IPU09N03LA, NTD4809NH, NTD4809NHG
History: CEB15A03
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