All MOSFET. 2SJ455 Datasheet


2SJ455 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ455

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: ZP

2SJ455 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2SJ455 Datasheet (PDF)

1.1. 2sj455.pdf Size:177K _update-mosfet


2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a

5.1. 2sj451.pdf Size:111K _renesas


2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is ZK. Absolute Maximum Ratin

5.2. 2sj45.pdf Size:2127K _nec


 5.3. 2sj450.pdf Size:46K _hitachi


2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from at this page 2SJ450 Absolute Maximum Rati

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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