2SJ455 Datasheet. Specs and Replacement

Type Designator: 2SJ455  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: ZP

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2SJ455 datasheet

 ..1. Size:177K  sanyo
 2sj455.pdf pdf_icon

2SJ455

2SJ455 Ordering number EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a... See More ⇒

 9.1. Size:111K  renesas
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2SJ455

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note Marking is ZK . Absol... See More ⇒

 9.2. Size:2127K  nec
 2sj45.pdf pdf_icon

2SJ455

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 9.3. Size:46K  hitachi
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2SJ455

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http //www.digchip.com at this page 2SJ450 Absolute Maximum Rati... See More ⇒

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Detailed specifications: R6046FNZ1, R6046FNZC8, R6047ENZ1, R6076ENZ1, R8005ANX, R8010ANX, R9521, R9522, IRF740, 2SK0123, BSC0906NS, IPD09N03LA, IPF09N03LA, IPS09N03LA, IPU09N03LA, NTD4809NH, NTD4809NHG

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