2SJ455 Datasheet and Replacement
Type Designator: 2SJ455
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: ZP
2SJ455 substitution
2SJ455 Datasheet (PDF)
2sj455.pdf

2SJ455Ordering number : EN5441SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ455ApplicationsFeatures Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a
2sj451.pdf

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG2. Gate13. Drain2SNote: Marking is ZK. Absol
2sj450.pdf

2SJ450Silicon P-Channel MOS FETADE-208-3811st. EditionApplicationHigh speed power switchingFeatures Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.OutlineUPAK1234D1. GateG2. Drain3. Source4. DrainSThis datasheet has been downloaded from http://www.digchip.com at this page2SJ450Absolute Maximum Rati
Datasheet: R6046FNZ1 , R6046FNZC8 , R6047ENZ1 , R6076ENZ1 , R8005ANX , R8010ANX , R9521 , R9522 , IRF740 , 2SK0123 , BSC0906NS , IPD09N03LA , IPF09N03LA , IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG .
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