SPA07N60C2 Todos los transistores

 

SPA07N60C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPA07N60C2

Código: 07N60C2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 32 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Carga de compuerta (Qg): 27 nC

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO220

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SPA07N60C2 Datasheet (PDF)

1.1. spa07n60c2 spp07n60c2 spb07n60c2.pdf Size:158K _update-mosfet

SPA07N60C2
SPA07N60C2

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

1.2. spa07n60cfd rev1.0.pdf Size:586K _infineon

SPA07N60C2
SPA07N60C2

SPA07N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1jmax 650 V DS V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0.7 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 6.6 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 -$ 1, #- V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;I HL>I8=>C< -4* 0

 1.3. spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf Size:620K _infineon

SPA07N60C2
SPA07N60C2

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31;-3-111:

1.4. spa07n60cfd.pdf Size:201K _inchange_semiconductor

SPA07N60C2
SPA07N60C2

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA07N60CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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