All MOSFET. SPA07N60C2 Datasheet


SPA07N60C2 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPA07N60C2

Marking Code: 07N60C2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 32 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 7.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 370 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO220

SPA07N60C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SPA07N60C2 Datasheet (PDF)

1.1. spa07n60c2 spp07n60c2 spb07n60c2.pdf Size:158K _update-mosfet


SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

1.2. spa07n60cfd rev1.0.pdf Size:586K _infineon


SPA07N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1jmax 650 V DS V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0.7 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 6.6 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 -$ 1, #- V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;I HL>I8=>C< -4* 0

 1.3. spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf Size:620K _infineon


SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31;-3-111:

1.4. spa07n60cfd.pdf Size:201K _inchange_semiconductor


INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA07N60CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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