RF1S25N06 Todos los transistores

 ..1. Size:82K  harris semi
 rf1s25n06.pdf

RFP25N06, RF1S25N06, S E M I C O N D U C T O R RF1S25N06SM 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB 25A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve DRAIN UIS Rating Curve (FLANGE) +175oC Operating Temperature JED

 0.1. Size:106K  intersil
 rfp25n06 rf1s25n06sm.pdf

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs 25A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

 9.1. Size:364K  fairchild semi
 rfp22n10 rf1s22n10sm.pdf

RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power Features MOSFETs 22A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080 the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse) sizes approaching those of LSI integrated circuits gives optimum utilization of