RFP25N06, RF1S25N06,S E M I C O N D U C T O RRF1S25N06SM25A, 60V, Avalanche Rated N-ChannelEnhancement-Mode Power MOSFETsDecember 1995Features PackagesJEDEC TO-220AB 25A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width CurveDRAIN UIS Rating Curve (FLANGE) +175oC Operating TemperatureJED

RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of