RF1S30P06 Todos los transistores

 

RF1S30P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1S30P06

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-262AA

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RF1S30P06 datasheet

 ..1. Size:44K  harris semi
rf1s30p06.pdf pdf_icon

RF1S30P06

RFG30P06, RFP30P06, S E M I C O N D U C T O R RF1S30P06, RF1S30P06SM 30A, 60V, Avalanche Rated, P-Channel March 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 30A, 60V SOURCE rDS(ON) = 0.065 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse WIdth Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op

 0.1. Size:386K  fairchild semi
rfg30p06 rfp30p06 rf1s30p06sm.pdf pdf_icon

RF1S30P06

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 6.1. Size:365K  fairchild semi
rfg30p05 rfp30p05 rf1s30p05sm.pdf pdf_icon

RF1S30P06

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 8.1. Size:188K  fairchild semi
rfp30n06le rf1s30n06lesm.pdf pdf_icon

RF1S30P06

RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

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