RF1S30P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S30P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: TO-262AA
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RF1S30P06 datasheet
rf1s30p06.pdf
RFG30P06, RFP30P06, S E M I C O N D U C T O R RF1S30P06, RF1S30P06SM 30A, 60V, Avalanche Rated, P-Channel March 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 30A, 60V SOURCE rDS(ON) = 0.065 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse WIdth Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op
rfg30p06 rfp30p06 rf1s30p06sm.pdf
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin
rfg30p05 rfp30p05 rf1s30p05sm.pdf
RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin
rfp30n06le rf1s30n06lesm.pdf
RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res
Otros transistores... RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE , AON7408 , RF1S40N10 , RF1S540 , RF1S60P03 , RF1S640 , RF1S70N06 , RF1S9540 , RF4C050AP , RF4C100BC .
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