RF1S30P06 Specs and Replacement
Type Designator: RF1S30P06
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO-262AA
RF1S30P06 substitution
- MOSFET ⓘ Cross-Reference Search
RF1S30P06 datasheet
rf1s30p06.pdf
RFG30P06, RFP30P06, S E M I C O N D U C T O R RF1S30P06, RF1S30P06SM 30A, 60V, Avalanche Rated, P-Channel March 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 30A, 60V SOURCE rDS(ON) = 0.065 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse WIdth Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op... See More ⇒
rfg30p06 rfp30p06 rf1s30p06sm.pdf
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒
rfg30p05 rfp30p05 rf1s30p05sm.pdf
RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒
rfp30n06le rf1s30n06lesm.pdf
RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res... See More ⇒
Detailed specifications: RE1C001ZP, RE1C002UN, RE1C002ZP, RE1E002SP, RE1J002YN, RE1L002SN, RF1S25N06, RF1S30N06LE, AON7408, RF1S40N10, RF1S540, RF1S60P03, RF1S640, RF1S70N06, RF1S9540, RF4C050AP, RF4C100BC
Keywords - RF1S30P06 MOSFET specs
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