RF4E080GN Todos los transistores

 ..1. Size:440K  rohm
 rf4e080gn.pdf

RF4E080GN Nch 30V 8A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 17.6mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 22.8mW (3) (7) ID 8A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7

 7.1. Size:440K  rohm
 rf4e080bn.pdf

RF4E080BN Nch 30V 8A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 17.6mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 24.6mW (3) (7) ID 8A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (

 9.1. Size:440K  rohm
 rf4e070gn.pdf

RF4E070GN Nch 30V 7A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 21.4mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 30.0mW (3) (7) ID 7A (3) (2) PD (1) 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7)

 9.2. Size:2907K  rohm
 rf4e075at.pdf

RF4E075AT Datasheet Pch -30V -7.5A Middle Power MOSFET lOutline l HUML2020L8 VDSS -30V RDS(on)(Max.) 21.7m ID 7.5A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant. 4) Hal

 9.3. Size:427K  rohm
 rf4e070bn.pdf

RF4E070BN Nch 30V 7A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 28.6mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 40.0mW (3) (7) ID 7A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7