SIS410DN Todos los transistores

 ..1. Size:526K  vishay
 sis410dn.pdf

SiS410DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.0048 at VGS = 10 V 35 20 12.7 nC 100 % Rg and UIS Tested 0.0063 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS DC

 8.1. Size:537K  vishay
 sis410n.pdf

SiS410DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0048 at VGS = 10 V 35 100 % Rg Tested COMPLIANT 20 12.7 nC 100 % UIS Tested 0.0063 at VGS = 4.5 V 35 APPLICATIONS PowerPAK 1212-8 DC/DC Converter - Notebook S - POL 3.30 mm 3.30 m

 9.1. Size:570K  vishay
 sis414dn.pdf

New Product SiS414DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.016 at VGS = 4.5 V 20 TrenchFET Power MOSFET 30 8.2 nC 0.020 at VGS = 2.5 V 20 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directive 2002/95/

 9.2. Size:534K  vishay
 sis413dn.pdf

SiS413DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization 0.0094 at VGS = - 10 V - 18d - 30 35.4 nC For definitions of compliance please see 0.0132 at VGS = - 4.5 V - 18d www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS

 9.3. Size:531K  vishay
 sis412dn.pdf

New Product SiS412DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.024 at VGS = 10 V 12 100 % Rg Tested 30 3.8 nC 0.030 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 Notebook PC - System Power - Load Switch S D 3.30 mm

 9.4. Size:156K  vishay
 sis415dnt.pdf

SiS415DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thin 0.8 mm max. height 0.0040 at VGS = - 10 V 100 % Rg and UIS Tested - 35a Material categorization 0.0055 at VGS = - 4.5 V - 20 - 35a 55.5 nC For definitions of compliance please see 0.0095