SIS410DN - аналоги, даташиты, параметры транзистора

SIS410DN Datasheet (PDF)

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SiS410DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0048 at VGS = 10 V 3520 12.7 nC 100 % Rg and UIS Tested0.0063 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS DC

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SiS410DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0048 at VGS = 10 V 35 100 % Rg TestedCOMPLIANT 20 12.7 nC 100 % UIS Tested0.0063 at VGS = 4.5 V 35APPLICATIONSPowerPAK 1212-8 DC/DC Converter- NotebookS - POL3.30 mm 3.30 m

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New ProductSiS414DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, g Qg (Typ.)Definition0.016 at VGS = 4.5 V 20 TrenchFET Power MOSFET30 8.2 nC0.020 at VGS = 2.5 V 20 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/

9.2. Size:534K vishay
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SiS413DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0094 at VGS = - 10 V - 18d- 30 35.4 nC For definitions of compliance please see0.0132 at VGS = - 4.5 V - 18dwww.vishay.com/doc?99912PowerPAK 1212-8APPLICATIONS