SIS427EDN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIS427EDN Datasheet (PDF)

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SiS427EDNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)d, g Qg (Typ.) 100 % Rg and UIS Tested Typical ESD Performance: 2500 V (HBM)0.0106 at VGS = - 10 V - 50d Material categorization:- 30 0.0160 at VGS = - 6 V - 42.1 22.6 nCFor definitions of compliance please see 0.0213 at

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SiS426DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21Definition VDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 35g 100 % Rg and UIS Tested20 13.2 nC0.0058 at VGS = 4.5 V 35g Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK 1212-8 P

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New ProductSiS424DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested0.0064 at VGS = 10 V 3520 9.5 nC 100 % UIS Tested0.0089 at VGS = 4.5 V 35APPLICATIONS DC/DC ConverterPowerPAK 1212-8 POL Notebook, System Power

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SiS429DNTwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.021 at VGS = -10 V -20 e-30 15 nC Thin 0.8 mm profile0.034 at VGS = -4.5 V -18.7 Material categorization: Thin PowerPAK 1212-8 Single For definitions of compliance please

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .