SIS427EDN datasheet, подбор замены

 ..1. Size:543K  vishay
 sis427edn.pdf 

SiS427EDN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d, g Qg (Typ.) 100 % Rg and UIS Tested Typical ESD Performance 2500 V (HBM) 0.0106 at VGS = - 10 V - 50d Material categorization - 30 0.0160 at VGS = - 6 V - 42.1 22.6 nC For definitions of compliance please see 0.0213 at

 9.1. Size:529K  vishay
 sis426dn.pdf 

SiS426DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) TrenchFET Power MOSFET 0.0045 at VGS = 10 V 35g 100 % Rg and UIS Tested 20 13.2 nC 0.0058 at VGS = 4.5 V 35g Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK 1212-8 P

 9.2. Size:564K  vishay
 sis424dn.pdf 

New Product SiS424DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested 0.0064 at VGS = 10 V 35 20 9.5 nC 100 % UIS Tested 0.0089 at VGS = 4.5 V 35 APPLICATIONS DC/DC Converter PowerPAK 1212-8 POL Notebook, System Power

 9.3. Size:208K  vishay
 sis429dnt.pdf 

SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.021 at VGS = -10 V -20 e -30 15 nC Thin 0.8 mm profile 0.034 at VGS = -4.5 V -18.7 Material categorization Thin PowerPAK 1212-8 Single For definitions of compliance please