SIS430DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIS430DN Datasheet (PDF)

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SiS430DNVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0051 at VGS = 10 V 35 100 % Rg Tested25 13 nC 100 % UIS Tested0.0069 at VGS = 4.5 V 35APPLICATIONSPowerPAK 1212-8 DC/DC Converter- POLS - Server3.30 mm 3.30 mmD1S2S3G

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SiS439DNTwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)f Qg (Typ.) Low Thermal Resistance PowerPAK Package 0.0110 at VGS = - 10 V - 50ewith Small Size and Low 0.75 mm Profile- 30 23 nC0.0195 at VGS= - 4.5 V - 43.5 100 % Rg and UIS Tested Material categorization:

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SiS435DNTVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thin 0.8 mm max. height 100 % Rg and UIS Tested0.0054 at VGS = - 4.5V - 30a Material categorization:0.0060 at VGS = - 3.7 V - 30a- 20 57 nC For definitions of compliance please see 0.0083

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New ProductSiS436DNVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0105 at VGS = 10 V TrenchFET Gen III Power MOSFET1625 6.7 nC 100 % Rg Tested0.013 at VGS = 4.5 V 16 100 % UIS TestedPowerPAK 1212-8APPLICATIONS DC/DC Conver