SIS436DN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIS436DN datasheet

..1. Size:566K vishay
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New Product SiS436DN Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0105 at VGS = 10 V TrenchFET Gen III Power MOSFET 16 25 6.7 nC 100 % Rg Tested 0.013 at VGS = 4.5 V 16 100 % UIS Tested PowerPAK 1212-8 APPLICATIONS DC/DC Conver

9.1. Size:152K vishay
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SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)f Qg (Typ.) Low Thermal Resistance PowerPAK Package 0.0110 at VGS = - 10 V - 50e with Small Size and Low 0.75 mm Profile - 30 23 nC 0.0195 at VGS= - 4.5 V - 43.5 100 % Rg and UIS Tested Material categorization

9.2. Size:175K vishay
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SiS435DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Thin 0.8 mm max. height 100 % Rg and UIS Tested 0.0054 at VGS = - 4.5V - 30a Material categorization 0.0060 at VGS = - 3.7 V - 30a - 20 57 nC For definitions of compliance please see 0.0083

9.3. Size:566K vishay
sis438dn.pdf pdf_icon

New Product SiS438DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0095 at VGS = 10 V TrenchFET Gen III Power MOSFET 16 20 7.3 nC 100 % Rg Tested 0.0125 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC Powe