SIS436DN Datasheet. Specs and Replacement

Type Designator: SIS436DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: 1212-8

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SIS436DN datasheet

 ..1. Size:566K  vishay
sis436dn.pdf pdf_icon

SIS436DN

New Product SiS436DN Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0105 at VGS = 10 V TrenchFET Gen III Power MOSFET 16 25 6.7 nC 100 % Rg Tested 0.013 at VGS = 4.5 V 16 100 % UIS Tested PowerPAK 1212-8 APPLICATIONS DC/DC Conver... See More ⇒

 9.1. Size:152K  vishay
sis439dnt.pdf pdf_icon

SIS436DN

SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)f Qg (Typ.) Low Thermal Resistance PowerPAK Package 0.0110 at VGS = - 10 V - 50e with Small Size and Low 0.75 mm Profile - 30 23 nC 0.0195 at VGS= - 4.5 V - 43.5 100 % Rg and UIS Tested Material categorization ... See More ⇒

 9.2. Size:175K  vishay
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SIS436DN

SiS435DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Thin 0.8 mm max. height 100 % Rg and UIS Tested 0.0054 at VGS = - 4.5V - 30a Material categorization 0.0060 at VGS = - 3.7 V - 30a - 20 57 nC For definitions of compliance please see 0.0083 ... See More ⇒

 9.3. Size:566K  vishay
sis438dn.pdf pdf_icon

SIS436DN

New Product SiS438DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0095 at VGS = 10 V TrenchFET Gen III Power MOSFET 16 20 7.3 nC 100 % Rg Tested 0.0125 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC Powe... See More ⇒

Detailed specifications: SIS414DN, SIS424DN, SIS426DN, SIS427EDN, SIS429DNT, SIS430DN, SIS434DN, SIS435DNT, SI2302, SIS438DN, SIS439DNT, SIS443DN, SIS444DN, SIS447DN, SIS452DN, SIS454DN, SIS456DN

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