SIS443DN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIS443DN  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm

Encapsulados: 1212-8

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SIS443DN datasheet

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SIS443DN

SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization 0.0117 at VGS = - 10 V - 35d - 40 41.5 nC For definitions of compliance please see 0.0160 at VGS = - 4.5 V - 35d www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS

 9.1. Size:621K  vishay
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SIS443DN

SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS tested 0.0071 at VGS = -10 V -18 a Material categorization -20 0.0090 at VGS = -4.5 V -18 a 57.5 nC For definitions of compliance please see 0.0125 at VGS = -2.5 V -18 a ww

 9.2. Size:573K  vishay
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SIS443DN

New Product SiS448DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET 30 12 nC 0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to

 9.3. Size:545K  vishay
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SIS443DN

New Product SiS444DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Max. ID (A)f Qg (Typ.) TrenchFET Power MOSFET 0.0033 at VGS = 10 V 35g 100 % Rg and UIS Tested 30 33.5 nC 0.0043 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 35g APPLICATIONS Powe

MOSTRAR MÁS

Otros transistores... SIS427EDN, SIS429DNT, SIS430DN, SIS434DN, SIS435DNT, SIS436DN, SIS438DN, SIS439DNT, 20N50, SIS444DN, SIS447DN, SIS452DN, SIS454DN, SIS456DN, SIS468DN, SIS472ADN, SIS472DN