SIS443DN - параметры транзистора MOSFET, его аналоги, datasheet

SIS443DN Datasheet (PDF)

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SiS443DNVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0117 at VGS = - 10 V - 35d- 40 41.5 nC For definitions of compliance please see0.0160 at VGS = - 4.5 V - 35dwww.vishay.com/doc?99912PowerPAK 1212-8APPLICATIONS

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SiS447DNwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS tested0.0071 at VGS = -10 V -18 a Material categorization:-20 0.0090 at VGS = -4.5 V -18 a 57.5 nCFor definitions of compliance please see0.0125 at VGS = -2.5 V -18 aww

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New ProductSiS448DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 12 nC0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to

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New ProductSiS444DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Max.ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0033 at VGS = 10 V 35g 100 % Rg and UIS Tested30 33.5 nC0.0043 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC35gAPPLICATIONSPowe

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