2SK2531 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2531
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: ZP

Búsqueda de reemplazo de MOSFET 2SK2531

2SK2531 Datasheet (PDF)

..1. Size:41K sanyo
2sk2531.pdf

Ordering number : EN8609 2SK2531SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2531ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25C

8.1. Size:45K sanyo
2sk2532.pdf

Ordering number : EN5457 2SK2532SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2532ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25C

8.2. Size:39K sanyo
2sk2533.pdf

Ordering number : EN8611 2SK2533SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFET2SK2533 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surfacemountable package. High-speed switching.SpecificationsAbsolute Max

8.3. Size:44K sanyo
2sk2534.pdf

Ordering number : EN8612 2SK2534SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFET2SK2534 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25

8.4. Size:42K sanyo
2sk2530.pdf

Ordering number:ENN6406N-Channel Silicon MOSFET2SK2530Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B Low voltage drive.[2SK2530]6.52.35.00.540.850.71.20.6 0.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TP2092B[2SK2530]6.5 2.35.0 0.540.

8.5. Size:65K sanyo
2sk2539.pdf

Ordering number:ENN5075N-Channel Junction Silicon FET2SK2539High-Frequency Amplifier,Analog Switch ApplicationsFeatures Package Dimensions Large | yfs |.unit:mm Small Ciss.2050A Small-sized package permitting 2SK2539-applied[2SK2539]sets to be made small and slim. Adoption of FBET process.0.40.1630 to 0.11 0.95 0.95 21.92.91 : Source2 : Dr

8.6. Size:30K panasonic
2sk2538.pdf

Power F-MOS FETs 2SK25382SK2538Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed5.5 0.2 2.7 0.2High-speed switchingNo secondary breakdown3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8 0.1 Absolute Maxi

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