2SK2531 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2531
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 95 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: ZP
2SK2531 Datasheet (PDF)
2sk2531.pdf
Ordering number : EN8609 2SK2531SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2531ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25C
2sk2532.pdf
Ordering number : EN5457 2SK2532SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2532ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25C
2sk2533.pdf
Ordering number : EN8611 2SK2533SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFET2SK2533 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surfacemountable package. High-speed switching.SpecificationsAbsolute Max
2sk2534.pdf
Ordering number : EN8612 2SK2534SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFET2SK2534 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25
2sk2530.pdf
Ordering number:ENN6406N-Channel Silicon MOSFET2SK2530Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B Low voltage drive.[2SK2530]6.52.35.00.540.850.71.20.6 0.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TP2092B[2SK2530]6.5 2.35.0 0.540.
2sk2539.pdf
Ordering number:ENN5075N-Channel Junction Silicon FET2SK2539High-Frequency Amplifier,Analog Switch ApplicationsFeatures Package Dimensions Large | yfs |.unit:mm Small Ciss.2050A Small-sized package permitting 2SK2539-applied[2SK2539]sets to be made small and slim. Adoption of FBET process.0.40.1630 to 0.11 0.95 0.95 21.92.91 : Source2 : Dr
2sk2538.pdf
Power F-MOS FETs 2SK25382SK2538Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed5.5 0.2 2.7 0.2High-speed switchingNo secondary breakdown3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8 0.1 Absolute Maxi
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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