RFG30P05 Todos los transistores

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RFG30P05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFG30P05

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 50 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.065 Ohm

Empaquetado / Estuche: TO247

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RFG30P05 Datasheet (PDF)

1.1. rfg30p05 rfp30p05 rf1s30p05sm.pdf Size:365K _fairchild_semi

RFG30P05
RFG30P05

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 50V These are P-Channel power MOSFETs manufactured • rDS(ON) = 0.065Ω using the MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

3.1. rfg30p06 rfp30p06 rf1s30p06sm.pdf Size:386K _fairchild_semi

RFG30P05
RFG30P05

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 60V These are P-Channel power MOSFETs manufactured using • rDS(ON) = 0.065Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

Otros transistores... RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , IRF510 , RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE .

 


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