All MOSFET. RFG30P05 Datasheet

 

RFG30P05 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFG30P05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO247

 RFG30P05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFG30P05 Datasheet (PDF)

 ..1. Size:365K  fairchild semi
 rfg30p05 rfp30p05 rf1s30p05sm.pdf

RFG30P05 RFG30P05

RFG30P05, RFP30P05, RF1S30P05SMData Sheet January 200230A, 50V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 50VThese are P-Channel power MOSFETs manufactured rDS(ON) = 0.065using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 7.1. Size:386K  fairchild semi
 rfg30p06 rfp30p06 rf1s30p06sm.pdf

RFG30P05 RFG30P05

RFG30P06, RFP30P06, RF1S30P06SMData Sheet January 200230A, 60V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

Datasheet: RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , 2SK3878 , RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE .

 

 
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