RFG30P05 Specs and Replacement
Type Designator: RFG30P05
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO247
RFG30P05 substitution
- MOSFET ⓘ Cross-Reference Search
RFG30P05 datasheet
rfg30p05 rfp30p05 rf1s30p05sm.pdf
RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒
rfg30p06 rfp30p06 rf1s30p06sm.pdf
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒
Detailed specifications: RFD8P05, RFD8P05SM, RFD8P06E, RFD8P06ESM, RFD8P06LE, RFD8P06LESM, RFF60P06, RFF70N06, P55NF06, RFG30P06, RFG40N10, RFG40N10LE, RFG45N06, RFG45N06LE, RFG50N05L, RFG50N06, RFG50N06LE
Keywords - RFG30P05 MOSFET specs
RFG30P05 cross reference
RFG30P05 equivalent finder
RFG30P05 pdf lookup
RFG30P05 substitution
RFG30P05 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
