RFG40N10 Todos los transistores

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RFG40N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFG40N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 160 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO247

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RFG40N10 Datasheet (PDF)

1.1. rfg40n10 rfp40n10 rf1s40n10-sm.pdf Size:369K _fairchild_semi

RFG40N10
RFG40N10

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs • 40A, 100V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.040Ω the MegaFET process. This process, which uses feature • UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

1.2. rfg40n10le rfp40n10le rf1s40n10lesm.pdf Size:410K _intersil

RFG40N10
RFG40N10

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs • 40A, 100V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.040Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes appr

Otros transistores... RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , RFG30P06 , 2N5484 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E .

 


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