SIZ904DT MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIZ904DT datasheet

..1. Size:226K vishay
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New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition 0.024 at VGS = 10 V TrenchFET Power MOSFETs 12a Channel-1 30 3.8 nC 100 % Rg and UIS Tested 0.030 at VGS = 4.5 V 12a Compliant to RoHS Directive 2002/95/EC 0.0135 at

9.1. Size:198K vishay
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New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) TrenchFET Power MOSFETs 0.0072 at VGS = 10 V 24a 100 % Rg and UIS Tested Channel-1 30 13.5 nC 0.0092 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 24a APPLICATIO

9.2. Size:217K vishay
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New Product SiZ902DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) TrenchFET Power MOSFETs 0.0120 at VGS = 10 V 16a 100 % Rg and UIS Tested Channel-1 30 6.8 nC 0.0145 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 16a APPL

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