SIZ904DT MOSFET. Datasheet pdf. Equivalent
Type Designator: SIZ904DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 9.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: POWERPAIR6X5
SIZ904DT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIZ904DT Datasheet (PDF)
siz904dt.pdf
New ProductSiZ904DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.024 at VGS = 10 V TrenchFET Power MOSFETs12aChannel-1 30 3.8 nC 100 % Rg and UIS Tested0.030 at VGS = 4.5 V 12a Compliant to RoHS Directive 2002/95/EC0.0135 at
siz900dt.pdf
New ProductSiZ900DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.0072 at VGS = 10 V 24a 100 % Rg and UIS TestedChannel-1 30 13.5 nC0.0092 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC24aAPPLICATIO
siz902dt.pdf
New ProductSiZ902DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.0120 at VGS = 10 V 16a 100 % Rg and UIS TestedChannel-1 30 6.8 nC0.0145 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC16aAPPL
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: R5016ANJ
History: R5016ANJ
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