SIZ916DT MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIZ916DT datasheet

..1. Size:209K vishay
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New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A)g Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0064 at VGS = 10 V 16a Channel-1 30 7.2 nC For definitions of compliance please see 0.0100 at VGS = 4.5 V 16a www.vishay.com/doc?999

9.1. Size:205K vishay
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New Product SiZ910DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 0.0058 at VGS = 10 V 40a 100 % Rg and UIS Tested Channel-1 30 12.5 nC 0.0075 at VGS = 4.5 V 40a Compliant to RoHS Directive 2002/95/EC 0.

9.2. Size:217K vishay
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New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0120 at VGS = 10 V 16a For definitions of compliance please see Channel-1 30 6.8 nC 0.0145 at VGS = 4.5 V www.vishay.com/doc?99912 16a 0.0037 at V

9.3. Size:199K vishay
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SiZ914DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A)g Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.00640 at VGS = 10 V 16a Channel-1 30 7.2 nC For definitions of compliance please see 0.01000 at VGS = 4.5 V 16a www.vishay.com/doc?99912 0.00137 at

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