SIZ916DT Datasheet and Replacement
Type Designator: SIZ916DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 375 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: POWERPAIR6X5
SIZ916DT Datasheet (PDF)
siz916dt.pdf

New ProductSiZ916DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETsVDS (V) RDS(on) () (Max.)ID (A)g Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0064 at VGS = 10 V 16aChannel-1 30 7.2 nCFor definitions of compliance please see 0.0100 at VGS = 4.5 V 16awww.vishay.com/doc?999
siz910dt.pdf

New ProductSiZ910DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.)Definition TrenchFET Power MOSFETs0.0058 at VGS = 10 V 40a 100 % Rg and UIS TestedChannel-1 30 12.5 nC0.0075 at VGS = 4.5 V 40a Compliant to RoHS Directive 2002/95/EC0.
siz918dt.pdf

New ProductSiZ918DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0120 at VGS = 10 V 16aFor definitions of compliance please seeChannel-1 30 6.8 nC0.0145 at VGS = 4.5 V www.vishay.com/doc?9991216a0.0037 at V
siz914dt.pdf

SiZ914DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETsVDS (V) RDS(on) () (Max.)ID (A)g Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.00640 at VGS = 10 V 16aChannel-1 30 7.2 nCFor definitions of compliance please see 0.01000 at VGS = 4.5 V 16awww.vishay.com/doc?999120.00137 at
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