SKI04024 Todos los transistores

 ..1. Size:235K  sanken-ele
 ski04024.pdf

40 V, 85 A, 2.6 m Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 3.2 m max. (VGS = 10 V, ID = 82.5 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate

 ..2. Size:255K  inchange semiconductor
 ski04024.pdf

isc N-Channel MOSFET Transistor SKI04024 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.1. Size:235K  sanken-ele
 ski04033.pdf

40 V, 80 A, 3.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 58.5 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate

 8.2. Size:235K  sanken-ele
 ski04044.pdf

40 V, 80 A, 4.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04044 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 5.2 m max. (VGS = 10 V, ID = 42.8 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate

 8.3. Size:255K  inchange semiconductor
 ski04033.pdf

isc N-Channel MOSFET Transistor SKI04033 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.4. Size:255K  inchange semiconductor
 ski04044.pdf

isc N-Channel MOSFET Transistor SKI04044 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo