All MOSFET. SKI04024 Datasheet

 

SKI04024 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SKI04024
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93.7 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO-263

 SKI04024 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKI04024 Datasheet (PDF)

 ..1. Size:235K  sanken-ele
 ski04024.pdf

SKI04024 SKI04024

40 V, 85 A, 2.6 m Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 3.2 m max. (VGS = 10 V, ID = 82.5 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate

 ..2. Size:255K  inchange semiconductor
 ski04024.pdf

SKI04024 SKI04024

isc N-Channel MOSFET Transistor SKI04024FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:235K  sanken-ele
 ski04033.pdf

SKI04024 SKI04024

40 V, 80 A, 3.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 58.5 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate

 8.2. Size:235K  sanken-ele
 ski04044.pdf

SKI04024 SKI04024

40 V, 80 A, 4.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04044 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 5.2 m max. (VGS = 10 V, ID = 42.8 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate

 8.3. Size:255K  inchange semiconductor
 ski04033.pdf

SKI04024 SKI04024

isc N-Channel MOSFET Transistor SKI04033FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.4. Size:255K  inchange semiconductor
 ski04044.pdf

SKI04024 SKI04024

isc N-Channel MOSFET Transistor SKI04044FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFH7N90

 

 
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