SKI04033 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SKI04033 Datasheet (PDF)

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40 V, 80 A, 3.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 58.5 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate

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isc N-Channel MOSFET Transistor SKI04033FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.1. Size:235K sanken-ele
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40 V, 80 A, 4.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04044 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 5.2 m max. (VGS = 10 V, ID = 42.8 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate

8.2. Size:235K sanken-ele
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40 V, 85 A, 2.6 m Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 3.2 m max. (VGS = 10 V, ID = 82.5 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate