SKI06048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SKI06048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11.3 nS
   Cossⓘ - Capacitancia de salida: 665 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SKI06048

SKI06048 Datasheet (PDF)

..1. Size:235K sanken-ele
ski06048.pdf

60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET SKI06048 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate

..2. Size:256K inchange semiconductor
ski06048.pdf

isc N-Channel MOSFET Transistor SKI06048FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.1. Size:235K sanken-ele
ski06073.pdf

60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET SKI06073 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 78 A (4) D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate

8.2. Size:255K inchange semiconductor
ski06073.pdf

isc N-Channel MOSFET Transistor SKI06073FEATURESDrain Current I = 78A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:235K sanken-ele
ski06106.pdf

60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 57 A (4) D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

9.2. Size:255K inchange semiconductor
ski06106.pdf

isc N-Channel MOSFET Transistor SKI06106FEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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