SKI06048
MOSFET. Datasheet pdf. Equivalent
Type Designator: SKI06048
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 135
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 94.7
nC
trⓘ - Rise Time: 11.3
nS
Cossⓘ -
Output Capacitance: 665
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049
Ohm
Package:
TO-263
SKI06048
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SKI06048
Datasheet (PDF)
..1. Size:235K sanken-ele
ski06048.pdf 
60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET SKI06048 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate
..2. Size:256K inchange semiconductor
ski06048.pdf
isc N-Channel MOSFET Transistor SKI06048FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.1. Size:235K sanken-ele
ski06073.pdf
60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET SKI06073 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 78 A (4) D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate
8.2. Size:255K inchange semiconductor
ski06073.pdf
isc N-Channel MOSFET Transistor SKI06073FEATURESDrain Current I = 78A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:235K sanken-ele
ski06106.pdf
60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 57 A (4) D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate
9.2. Size:255K inchange semiconductor
ski06106.pdf
isc N-Channel MOSFET Transistor SKI06106FEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: FMM50-025TF
, FMM60-02TF
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, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
