SKI07114 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SKI07114
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 116 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 54 nC
   trⓘ - Tiempo de subida: 6.4 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SKI07114

SKI07114 Datasheet (PDF)

..1. Size:235K sanken-ele
ski07114.pdf

75 V, 62 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET SKI07114 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 62 A (4) D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------ 25.0nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate

..2. Size:255K inchange semiconductor
ski07114.pdf

isc N-Channel MOSFET Transistor SKI07114FEATURESDrain Current I = 62A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.1. Size:235K sanken-ele
ski07171.pdf

75 V, 46 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET SKI07171 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 46 A (4) D RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate

8.2. Size:255K inchange semiconductor
ski07171.pdf

isc N-Channel MOSFET Transistor SKI07171FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:235K sanken-ele
ski07074.pdf

75 V, 85 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET SKI07074 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate

9.2. Size:255K inchange semiconductor
ski07074.pdf

isc N-Channel MOSFET Transistor SKI07074FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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