Справочник MOSFET. SKI07114

 

SKI07114 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SKI07114
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 116 W
   Предельно допустимое напряжение сток-исток |Uds|: 75 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 62 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 54 nC
   Время нарастания (tr): 6.4 ns
   Выходная емкость (Cd): 370 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0097 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SKI07114

 

 

SKI07114 Datasheet (PDF)

 ..1. Size:235K  sanken-ele
 ski07114.pdf

SKI07114 SKI07114

75 V, 62 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET SKI07114 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 62 A (4) D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------ 25.0nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate

 ..2. Size:255K  inchange semiconductor
 ski07114.pdf

SKI07114 SKI07114

isc N-Channel MOSFET Transistor SKI07114FEATURESDrain Current I = 62A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:235K  sanken-ele
 ski07171.pdf

SKI07114 SKI07114

75 V, 46 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET SKI07171 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 46 A (4) D RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate

 8.2. Size:255K  inchange semiconductor
 ski07171.pdf

SKI07114 SKI07114

isc N-Channel MOSFET Transistor SKI07171FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:235K  sanken-ele
 ski07074.pdf

SKI07114 SKI07114

75 V, 85 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET SKI07074 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate

 9.2. Size:255K  inchange semiconductor
 ski07074.pdf

SKI07114 SKI07114

isc N-Channel MOSFET Transistor SKI07074FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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