SKI10195 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKI10195  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 116 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0184 Ohm

Encapsulados: TO-263

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SKI10195 datasheet

 ..1. Size:235K  sanken-ele
 ski10195.pdf pdf_icon

SKI10195

100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 47 A (4) D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

 ..2. Size:255K  inchange semiconductor
 ski10195.pdf pdf_icon

SKI10195

isc N-Channel MOSFET Transistor SKI10195 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 18.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.1. Size:235K  sanken-ele
 ski10123.pdf pdf_icon

SKI10195

100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 66 A (4) D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

 8.2. Size:254K  inchange semiconductor
 ski10123.pdf pdf_icon

SKI10195

isc N-Channel MOSFET Transistor SKI10123 FEATURES Drain Current I = 66A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 12.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

MOSTRAR MÁS

Otros transistores... SKI04044, SKI06048, SKI06073, SKI06106, SKI07074, SKI07114, SKI07171, SKI10123, IRF3205, SKI10297, SW1N55D, AON7430L, AP9915H, AP9915J, FHP730, FIR120N055PG, FTP16N06B