All MOSFET. SKI10195 Datasheet

 

SKI10195 MOSFET. Datasheet pdf. Equivalent

Type Designator: SKI10195

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 116 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 57.7 nC

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0184 Ohm

Package: TO-263

SKI10195 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKI10195 Datasheet (PDF)

1.1. ski10195.pdf Size:235K _update-mosfet

SKI10195
SKI10195

100 V, 47 A, 13.2 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263  V(BR)DSS -------------------------------- 100 V (ID = 100 µA)  ID ---------------------------------------------------------- 47 A (4) D  RDS(ON) -------- 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)  Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A)  Low Total Gat

1.2. ski10195.pdf Size:235K _sanken-ele

SKI10195
SKI10195

100 V, 47 A, 13.2 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263  V(BR)DSS -------------------------------- 100 V (ID = 100 µA)  ID ---------------------------------------------------------- 47 A (4) D  RDS(ON) -------- 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)  Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A)  Low Total Gat

 4.1. ski10123.pdf Size:235K _update-mosfet

SKI10195
SKI10195

100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263  V(BR)DSS -------------------------------- 100 V (ID = 100 µA)  ID ---------------------------------------------------------- 66 A (4) D  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)  Low Total Gate

4.2. ski10123.pdf Size:235K _sanken-ele

SKI10195
SKI10195

100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263  V(BR)DSS -------------------------------- 100 V (ID = 100 µA)  ID ---------------------------------------------------------- 66 A (4) D  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)  Low Total Gate

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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