SKI10195 Datasheet: MOSFET, N-Ch, 100V, 47A. Full specification with pinout and replacement list

SKI10195 Datasheet. Specs and Replacement

Type Designator: SKI10195 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 116 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0184 Ohm

Package: TO-263

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SKI10195 datasheet

..1. Size:235K sanken-ele
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100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 47 A (4) D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat... See More ⇒

..2. Size:255K inchange semiconductor
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isc N-Channel MOSFET Transistor SKI10195 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 18.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

8.1. Size:235K sanken-ele
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100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 66 A (4) D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate... See More ⇒

8.2. Size:254K inchange semiconductor
ski10123.pdf pdf_icon

isc N-Channel MOSFET Transistor SKI10123 FEATURES Drain Current I = 66A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 12.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒