FIR120N055PG Todos los transistores

 ..1. Size:3177K  first silicon
 fir120n055pg.pdf

FIR120N055PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)

 6.1. Size:3231K  first semi
 fir120n08pg.pdf

FIR120N08PG 120AN - CHANNEL MOSFET PIN Connection TO-220AB Product Summary TO-220 VDS 80V RDS(on)@VGS=10V 4.9m I 120A D Schematic diagram D Features Uses advanced SGT technology G Extremely low on-resistance RDS(on) Excellent gate charge x RDS(on) product(FOM) S Application Motor Drives Marking Diagram SR (Synchronous rectification) DC/DC conv

 9.1. Size:1752K  first semi
 fir12n65fg.pdf

FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=14.6pF(Typ.) G Low gate charge Qg=41nC(Typ.) D S Low RDS(on) RDS(on)=0.65 (Max.) D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR12N65F FIR12N65F = Specific Device C

 9.2. Size:1619K  first semi
 fir12n15lg.pdf

FIR12N15LG 150V N-Channel MOSFET-D PIN Connection TO-252(D-PAK) Features Low Intrinsic Capacitances. D Excellent Switching Characteristics. Extended Safe Operating Area. G Unrivalled Gate Charge Qg= 15.5nC (Typ.). S BVDSS=150V,ID=12A RDS(on) 0.29 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram YAWWVT Y =

 9.3. Size:3579K  first semi
 fir12n70fg.pdf

FIR12N70FG 700V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 44nC (Typ.). BVDSS=700V,ID=12A G DS RDS(on) 0.75 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc

 9.4. Size:1825K  first semi
 fir12n60fg.pdf

FIR12N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features BVDDS=600V (Min.) Low gate charge Qg=41nC (Typ.) Low drain-source On resistance RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking Diagram Y = Year A = Assembly Location WW = Work Week YAWW FIR12N60F = Specif

 9.5. Size:4008K  first semi
 fir12n80fg.pdf

FIR12N80FG 800V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 45nC (Typ.) BVDSS=800V,ID=12A G D S RDS(on) 1.0 (Max) @VG=10V 100% Avalanche Tested Marking Diagram D G S Y = Year A = Assembly Location WW = Work Week