Справочник MOSFET. FIR120N055PG

 

FIR120N055PG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FIR120N055PG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 125 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 470 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для FIR120N055PG

 

 

FIR120N055PG Datasheet (PDF)

 ..1. Size:3177K  first silicon
 fir120n055pg.pdf

FIR120N055PG FIR120N055PG

FIR120N055PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)

 6.1. Size:3231K  first semi
 fir120n08pg.pdf

FIR120N055PG FIR120N055PG

FIR120N08PG120AN - CHANNEL MOSFETPIN Connection TO-220ABProduct SummaryTO-220VDS 80VRDS(on)@VGS=10V 4.9mI 120ADSchematic diagram D Features Uses advanced SGT technologyG Extremely low on-resistance RDS(on) Excellent gate charge x RDS(on) product(FOM)S Application Motor DrivesMarking Diagram SR (Synchronous rectification) DC/DC conv

 9.1. Size:1752K  first semi
 fir12n65fg.pdf

FIR120N055PG FIR120N055PG

FIR12N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) G Low gate charge : Qg=41nC(Typ.) D S Low RDS(on) : RDS(on)=0.65(Max.) D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR12N65FFIR12N65F = Specific Device C

 9.2. Size:1619K  first semi
 fir12n15lg.pdf

FIR120N055PG FIR120N055PG

FIR12N15LG150V N-Channel MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 15.5nC (Typ.).S BVDSS=150V,ID=12A RDS(on) : 0.29 (Max) @VG=10VgSchematic dia ram 100% Avalanche Tested D G S Marking DiagramYAWWVTY =

 9.3. Size:3579K  first semi
 fir12n70fg.pdf

FIR120N055PG FIR120N055PG

FIR12N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 44nC (Typ.). BVDSS=700V,ID=12A GDS RDS(on) : 0.75 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc

 9.4. Size:1825K  first semi
 fir12n60fg.pdf

FIR120N055PG FIR120N055PG

FIR12N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures BVDDS=600V (Min.) Low gate charge: Qg=41nC (Typ.) Low drain-source On resistance: RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking DiagramY = YearA = Assembly LocationWW = Work WeekYAWWFIR12N60F = Specif

 9.5. Size:4008K  first semi
 fir12n80fg.pdf

FIR120N055PG FIR120N055PG

FIR12N80FG800V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 45nC (Typ.) BVDSS=800V,ID=12AG D S RDS(on) :1.0 (Max) @VG=10V 100% Avalanche TestedMarking DiagramD G S Y = YearA = Assembly LocationWW = Work Week

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