NCEP60T12A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T12A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 680 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO220
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NCEP60T12A Datasheet (PDF)
ncep60t12a.pdf

Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O
ncep60t12ak.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t12ad.pdf

Pb Free ProductNCEP60T12ADhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =120ADS Dfrequency switching performance. Both conduction and R
ncep60t12k.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T12KNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... HY4008W , HY4008A , ITA08N65R , ME15N10G , MMF80R650P , NCE65T130D , NCE65T130 , NCE65T130F , AON6414A , NTMFS4955N , SE6880 , SW50N06 , 2SK3642-ZK , BUZ384 , EMA09N03AN , FQB60N03L , FTP540 .
History: WML07N105C2 | SML5030HN | GSM4248W | GSM4440 | CI60N120SM | R6006JNJ
History: WML07N105C2 | SML5030HN | GSM4248W | GSM4440 | CI60N120SM | R6006JNJ



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