NCEP60T12A MOSFET Datasheet: N-Ch, 60V, 120A. Full specification with pinout and replacement list

NCEP60T12A Specs and Replacement

Type Designator: NCEP60T12A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

NCEP60T12A substitution

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NCEP60T12A datasheet

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Pb Free Product http //www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O... See More ⇒

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Pb Free Product http //www.ncepower.com NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

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Pb Free Product NCEP60T12AD http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =120A DS D frequency switching performance. Both conduction and R ... See More ⇒

5.1. Size:434K ncepower
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Pb Free Product http //www.ncepower.com NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒