MT4953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MT4953
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 18.2 nC
   trⓘ - Tiempo de subida: 7.76 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOP8

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MT4953 Datasheet (PDF)

..1. Size:285K matrix
mt4953.pdf

MT4953Dual P-Channel High Density Trench MOSFET DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and

9.1. Size:480K diodes
fmmt495.pdf

FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 150V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020

9.2. Size:134K cdil
cmmt495.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMMT495PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312Marking Code is =495ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 170 VVCEOCollector Emitter Voltage 150 V

9.3. Size:426K jiangsu
fmmt495.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT495 TRANSISTOR (NPN)SOT-23FEATURE Low VCE(sat) hFE characterised up to 1A for high current gain hold up1. BASE For general amplification2. EMITTER3. COLLECTORMARKING: 495 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-B

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