MT4953 - описание и поиск аналогов

MT4953 Dual P-Channel High Density Trench MOSFET DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and

FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 150V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMMT495 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 Marking Code is =495 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 170 V VCEO Collector Emitter Voltage 150 V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT495 TRANSISTOR (NPN) SOT-23 FEATURE Low VCE(sat) hFE characterised up to 1A for high current gain hold up 1. BASE For general amplification 2. EMITTER 3. COLLECTOR MARKING 495 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B