SW2N65B Todos los transistores

 ..1. Size:797K  samwin
 sw2n65b.pdf

SAMWIN SW2N65B SW2N65B N-channel MOSFET TO-220F BVDSS 650V Features ID 2.0A High ruggedness RDS(ON) 5.6ohm RDS(ON) (Max 5.6 )@VGS=10V Gate Charge (Typical 7.7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This

 8.1. Size:388K  samwin
 sw2n65.pdf

SW2N65 SAMWIN N-channel MOSFET BVDSS 650V TO-220F TO-220 Features ID 2.0A High ruggedness RDS(ON) 5.5ohm RDS(ON) (Max 5.5 )@VGS=10V Gate Charge (Typical 7.8nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 3 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

 9.1. Size:218K  1
 ssi2n60a ssw2n60a.pdf

 9.2. Size:647K  fairchild semi
 ssi2n60b ssi2n60b ssw2n60b.pdf

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored

 9.3. Size:648K  fairchild semi
 ssw2n60b ssi2n60b.pdf

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored

 9.4. Size:509K  samsung
 ssw2n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) 3.892 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 9.5. Size:443K  samwin
 sw2n60b.pdf

SAMWIN SW2N60B N-channel MOSFET TO-220F IPAK DPAK TO-126 BVDSS 600V Features ID 2.0A High ruggedness RDS(ON) 4.5ohm RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typical 7.5nC) 2 Improved dv/dt Capability 1 2 1 2 1 100% Avalanche Tested 3 1 3 2 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is

 9.6. Size:895K  samwin
 sw2n60a1.pdf

SAMWIN SW2N60A1 SW2N60A1 N-channel IPAK/TO-220F MOSFET TO-251 TO-220F BVDSS 600V Features ID 2.0A High ruggedness RDS(ON) 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 10nC) Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced w

 9.7. Size:739K  samwin
 sw2n60d.pdf

SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET BVDSS 600V Features TO-252 TO-251 TO-220F ID 2A High ruggedness RDS(ON) 4.5 RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typ 9nC) Improved dv/dt Capability 1 1 2 1 100% Avalanche Tested 2 3 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with ad

 9.8. Size:797K  samwin
 sw2n60.pdf

SW2N60 SW2N60 SAMWIN N-channel MOSFET BVDSS 600V TO-220F TO-220 TO-251 Features ID 2.0A High ruggedness RDS(ON) 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 1 2 3 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced wit