SW2N65B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SW2N65B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 16.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 7.7 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.6 Ohm
   Paquete / Cubierta: TO-220F

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SW2N65B Datasheet (PDF)

..1. Size:797K samwin
sw2n65b.pdf

SAMWINSW2N65BSW2N65BN-channel MOSFETTO-220F BVDSS : 650VFeaturesID : 2.0A High ruggednessRDS(ON) : 5.6ohm RDS(ON) (Max 5.6 )@VGS=10V Gate Charge (Typical 7.7nC) Improved dv/dt Capability 2 100% Avalanche Tested12311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.This

8.1. Size:388K samwin
sw2n65.pdf

SW2N65SAMWINN-channel MOSFETBVDSS : 650VTO-220F TO-220FeaturesID : 2.0A High ruggednessRDS(ON) : 5.5ohm RDS(ON) (Max 5.5 )@VGS=10V Gate Charge (Typical 7.8nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 23 311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.

9.1. Size:218K 1
ssi2n60a ssw2n60a.pdf

9.2. Size:647K fairchild semi
ssi2n60b ssi2n60b ssw2n60b.pdf

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

9.3. Size:648K fairchild semi
ssw2n60b ssi2n60b.pdf

9.4. Size:509K samsung
ssw2n60a.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

9.5. Size:443K samwin
sw2n60b.pdf

SAMWIN SW2N60B N-channel MOSFET TO-220F IPAK DPAK TO-126 BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 4.5ohm RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typical 7.5nC) 2 Improved dv/dt Capability 1 2 1 2 1 100% Avalanche Tested 3 1 3 2 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is

9.6. Size:895K samwin
sw2n60a1.pdf

SAMWIN SW2N60A1 SW2N60A1N-channel IPAK/TO-220F MOSFET TO-251 TO-220F BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 10nC) Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced w

9.7. Size:739K samwin
sw2n60d.pdf

SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET BVDSS : 600V Features TO-252 TO-251 TO-220F ID : 2A High ruggedness RDS(ON) : 4.5 RDS(ON) (Max 4.5)@VGS=10V Gate Charge (Typ 9nC) Improved dv/dt Capability 1 1 2 1 100% Avalanche Tested 2 3 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with ad

9.8. Size:797K samwin
sw2n60.pdf

SW2N60SW2N60 SAMWIN N-channel MOSFET BVDSS : 600V TO-220F TO-220 TO-251 Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 1 2 3 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced wit

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