SW2N65B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SW2N65B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 16.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7.7 nC
trⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 40 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5.6 Ohm
Тип корпуса: TO-220F
SW2N65B Datasheet (PDF)
sw2n65b.pdf
SAMWINSW2N65BSW2N65BN-channel MOSFETTO-220F BVDSS : 650VFeaturesID : 2.0A High ruggednessRDS(ON) : 5.6ohm RDS(ON) (Max 5.6 )@VGS=10V Gate Charge (Typical 7.7nC) Improved dv/dt Capability 2 100% Avalanche Tested12311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.This
sw2n65.pdf
SW2N65SAMWINN-channel MOSFETBVDSS : 650VTO-220F TO-220FeaturesID : 2.0A High ruggednessRDS(ON) : 5.5ohm RDS(ON) (Max 5.5 )@VGS=10V Gate Charge (Typical 7.8nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 23 311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.
ssi2n60b ssi2n60b ssw2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60b ssi2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
sw2n60b.pdf
SAMWIN SW2N60B N-channel MOSFET TO-220F IPAK DPAK TO-126 BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 4.5ohm RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typical 7.5nC) 2 Improved dv/dt Capability 1 2 1 2 1 100% Avalanche Tested 3 1 3 2 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is
sw2n60a1.pdf
SAMWIN SW2N60A1 SW2N60A1N-channel IPAK/TO-220F MOSFET TO-251 TO-220F BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 10nC) Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced w
sw2n60d.pdf
SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET BVDSS : 600V Features TO-252 TO-251 TO-220F ID : 2A High ruggedness RDS(ON) : 4.5 RDS(ON) (Max 4.5)@VGS=10V Gate Charge (Typ 9nC) Improved dv/dt Capability 1 1 2 1 100% Avalanche Tested 2 3 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with ad
sw2n60.pdf
SW2N60SW2N60 SAMWIN N-channel MOSFET BVDSS : 600V TO-220F TO-220 TO-251 Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 1 2 3 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced wit
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