SW4N70K Todos los transistores

 ..1. Size:556K  samwin
 sw4n70k.pdf

SAMWIN SW4N70K N-channel TO-251,TO-252 MOSFET TO-251 TO-252 Features BVDSS 700V ID 4A High ruggedness RDS(ON) (Max1.3 )@VGS=10V RDS(ON) 1.3 Gate Charge (Typical 13nC) 1 Improved dv/dt Capability 1 2 2 3 3 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced

 8.1. Size:1038K  samwin
 sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 8.2. Size:741K  samwin
 sw4n70b.pdf

SAMWIN SW4N70B N-channel TO-220F /I-PAK MOSFET BVDSS 700V Features TO-220F TO-251 ID 4.0A High ruggedness RDS(ON) 2.8 RDS(ON) (Max 2.8 )@VGS=10V Gate Charge (Typ 12nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced