SW4N70K MOSFET Datasheet: N-Ch, 700V, 4A. Full specification with pinout and replacement list

SW4N70K Specs and Replacement

Type Designator: SW4N70K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-252

SW4N70K substitution

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SW4N70K datasheet

..1. Size:556K samwin
sw4n70k.pdf pdf_icon

SAMWIN SW4N70K N-channel TO-251,TO-252 MOSFET TO-251 TO-252 Features BVDSS 700V ID 4A High ruggedness RDS(ON) (Max1.3 )@VGS=10V RDS(ON) 1.3 Gate Charge (Typical 13nC) 1 Improved dv/dt Capability 1 2 2 3 3 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced ... See More ⇒

8.1. Size:1038K samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒

8.2. Size:741K samwin
sw4n70b.pdf pdf_icon

SAMWIN SW4N70B N-channel TO-220F /I-PAK MOSFET BVDSS 700V Features TO-220F TO-251 ID 4.0A High ruggedness RDS(ON) 2.8 RDS(ON) (Max 2.8 )@VGS=10V Gate Charge (Typ 12nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced ... See More ⇒

Detailed specifications: SW4N60D, SW4N60K, SW4N60V, SW4N65B, SW4N65D, SW4N65K, SW4N65U, SW4N70B, 5N60, SW4N80B, SW601Q, U55NF06, UC1764, UJN1205K, UJN1208K, UM6J1N, UM6K33N