SW4N70K
MOSFET. Datasheet pdf. Equivalent
Type Designator: SW4N70K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 325
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO-252
SW4N70K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SW4N70K
Datasheet (PDF)
..1. Size:556K samwin
sw4n70k.pdf
SAMWIN SW4N70K N-channel TO-251,TO-252 MOSFET TO-251 TO-252 Features BVDSS : 700V ID : 4A High ruggedness RDS(ON) (Max1.3)@VGS=10V RDS(ON) :1.3 Gate Charge (Typical 13nC) 1 Improved dv/dt Capability 1 2 2 3 3 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced
8.1. Size:1038K samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf
SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.
8.2. Size:741K samwin
sw4n70b.pdf
SAMWIN SW4N70B N-channel TO-220F /I-PAK MOSFET BVDSS : 700V Features TO-220F TO-251 ID : 4.0A High ruggedness RDS(ON) : 2.8 RDS(ON) (Max 2.8 )@VGS=10V Gate Charge (Typ 12nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced
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