UPA1814GR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1814GR
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
Qgⓘ - Carga de la puerta: 38 nC
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 658 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TSSOP-8
Búsqueda de reemplazo de MOSFET UPA1814GR
UPA1814GR Datasheet (PDF)
upa1814gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1814P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1814 is a switching device which can be85driven directly by a 4 V power source. The PA1814 features a low on-state resistance and1, 5, 8 : Drainexcellent switching characteristics, and is suitable for1.2 MAX.2, 3,
upa1818gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1815gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1819gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1819P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1819 is a switching device that can be driven85directly by a 4.0 V power source. This device features a low on-state resistance and1 : Drain11, 2, 3: Sourceexcellent switching characteristics, and is suitable for1.2
upa1816gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1816P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1816 is a switching device which can be85driven directly by a 1.8 V power source. This device features a low on-state resistance and1, 2, 3 : Sourceexcellent switching characteristics, and is suitable for1.2 MAX.4 : G
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: UPA2452TL
History: UPA2452TL
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918