UPA1814GR MOSFET. Datasheet pdf. Equivalent
Type Designator: UPA1814GR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 658 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TSSOP-8
UPA1814GR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UPA1814GR Datasheet (PDF)
upa1814gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1814P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1814 is a switching device which can be85driven directly by a 4 V power source. The PA1814 features a low on-state resistance and1, 5, 8 : Drainexcellent switching characteristics, and is suitable for1.2 MAX.2, 3,
upa1818gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1815gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1819gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1819P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1819 is a switching device that can be driven85directly by a 4.0 V power source. This device features a low on-state resistance and1 : Drain11, 2, 3: Sourceexcellent switching characteristics, and is suitable for1.2
upa1816gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1816P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1816 is a switching device which can be85driven directly by a 1.8 V power source. This device features a low on-state resistance and1, 2, 3 : Sourceexcellent switching characteristics, and is suitable for1.2 MAX.4 : G
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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