UPA1820GR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1820GR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 0.5 V
Carga de la puerta (Qg): 27 nC
Tiempo de subida (tr): 56 nS
Conductancia de drenaje-sustrato (Cd): 600 pF
Resistencia entre drenaje y fuente RDS(on): 0.0086 Ohm
Paquete / Cubierta: TSSOP-8
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UPA1820GR Datasheet (PDF)
upa1820gr.pdf
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upa1818gr.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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upa1872bgr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1803gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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upa1874bgr.pdf
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upa1814gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1814P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1814 is a switching device which can be85driven directly by a 4 V power source. The PA1814 features a low on-state resistance and1, 5, 8 : Drainexcellent switching characteristics, and is suitable for1.2 MAX.2, 3,
upa1819gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1819P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1819 is a switching device that can be driven85directly by a 4.0 V power source. This device features a low on-state resistance and1 : Drain11, 2, 3: Sourceexcellent switching characteristics, and is suitable for1.2
upa1874gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1874N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1874 is a switching device which can be85driven directly by a 2.5-V power source. This device features a low on-state resistance and1 :Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 :Sour
upa1855gr.pdf
UPA1855GR-9JG PCB24DATA SHEETMOS FIELD EFFECT TRANSISTORPA1855N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The PA1855 is a switching device which can bedriven directly by a 2.5 V power source. 85 The PA1855 features a low on-state resistance and1
upa1870gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1870N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1870 is a switching device which can be85driven directly by a 2.5-V power source. The PA1870 features a low on-state resistance and1 :Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 :Sourc
upa1872gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1872N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1872 is a switching device which can bedriven directly by a 2.5 V power source. 85 This device features a low on-state resistance andexcellent switching characteristics, and is suitable for 1 : Drain11.2 MAX.2, 3 : Sourc
upa1816gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1816P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1816 is a switching device which can be85driven directly by a 1.8 V power source. This device features a low on-state resistance and1, 2, 3 : Sourceexcellent switching characteristics, and is suitable for1.2 MAX.4 : G
upa1858gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1858 is a switching device, which can be85driven directly by a 2.5 V power source. This device features a low on-state resistance and1 : Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 : S
upa1870bgr.pdf
UPA1870BGRwww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA =
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